vp0808b/l/m, vp1008b/l/m siliconix p-37655erev. b, 25-jul-94 1 p-channel enhancement-mode mosfet transistors product summary part number v (br)dss min (v) r ds(on) max ( ) v gs(th) (v) i d (a) vp0808b 5 @ v gs = 10 v 2 to 4.5 0.88 vp0808l 80 5 @ v gs = 10 v 2 to 4.5 0.28 vp0808m 5 @ v gs = 10 v 2 to 4.5 0.31 vp1008b 5 @ v gs = 10 v 2 to 4.5 0.79 VP1008L 100 5 @ v gs = 10 v 2 to 4.5 0.28 vp1008m 5 @ v gs = 10 v 2 to 4.5 0.31 features benefits applications high-side switching low on-resistance: 2.5 moderate threshold: 3.4 v fast switching speed: 40 ns low input capacitance: 75 pf ease in driving switches low offset (error) voltage low-voltage operation high-speed switching easily driven without buffer drivers: relays, solenoids, lamps, hammers, displays, memories, transistors, etc. battery operated systems power supply, converter circuits motor control 1 2 3 to-205ad (to-39) (case drain) top view d g s 1 to-226aa (to-92) top view s d g 2 3 1 to-237 (tab drain) top view s d g 2 3 vp0808b vp1008b vp0808l VP1008L vp0808m vp1008m absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol vp0808b b vp0808l vp0808m vp1008b b VP1008L vp1008m unit drain-source voltage v ds 80 80 80 100 100 100 v gate-source voltage v gs 20 30 30 20 30 30 v continuous drain current = i d 0.88 0.28 0.31 0.79 0.28 0.31 (t j = 150 c) = i d 0.53 0.17 0.20 0.53 0.17 0.20 a pulsed drain current a i dm 3 3 3 3 3 3 power dissipation = p d 6.25 0.8 1 6.25 0.8 1 w power dissipation = p d 2.5 0.32 0.4 2.5 0.32 0.4 w maximum junction-to-ambient r thja 156 125 156 125 c/w maximum junction-to-case r thjc 20 20 c/w operating junction and storage temperature range t j , t stg 55 to 150 c notes a. pulse width limited by maximum junction temperature. b. reference case for all temperature testing. updates to this data sheet may be obtained via facsimile by calling siliconix faxback, 1-408-970-5600. please request faxback document #70218.
vp0808b/l/m, vp1008b/l/m 2 siliconix p-37655erev. b, 25-jul-94 specifications a limits vp0808b/l/m vp1008b/l/m parameter symbol test conditions typ b min max min max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 10 a 110 80 100 v gate-threshold voltage v gs(th) v ds = v gs , i d = 1 ma 3.4 2 4.5 2 4.5 v gate body leakage i gss v ds = 0 v, v gs = 20 v 100 100 na gate - body leakage i gss t j = 125 c 500 500 na v ds = 80 v, v gs = 0 v 10 zero gate voltage drain current i dss t j = 125 c 500 a zero gate voltage drain current i dss v ds = 100 v, v gs = 0 v 10 a t j = 125 c 500 on-state drain current c i d(on) v ds = 15 v, v gs = 10 v 2 1.1 1.1 a drain source on resistance c r ds( ) v gs = 10 v, i d = 1 a 2.5 5 5 drain - source on - resistance c r ds(on) t j = 125 c 4.4 8 8 forward transconductance c g fs v ds = 10 v, i d = 0.5 a 325 200 200 common source output conductance c g os v ds = 7.5 v, i d = 0.1 a 0.45 ms dynamic input capacitance c iss v 25 v v 0v 75 150 150 output capacitance c oss v ds = 25 v, v gs = 0 v f = 1 mhz 40 60 60 pf reverse transfer capacitance c rss 18 25 25 switching d turn on time t d(on) 11 15 15 turn - on time t r
25
05
30 40 40 ns turn - off time t d(off) 0 . 5
20 30 30 ns turn - off time t f 20 30 30 notes a. t a = 25 c unless otherwise noted. vpdv10 b. for design aid only, not subject to production testing. c. pulse test: pw 300 s duty cycle 2%. d. switching time is essentially independent of operating temperature.
vp0808b/l/m, vp1008b/l/m siliconix p-37655erev. b, 25-jul-94 3 typical characteristics (25 c unless otherwise noted) 20 16 12 8 4 0 3.8 v 0 0.4 0.8 1.2 1.6 2.0 3.6 v 3.4 v 3.2 v ohmic region characteristics output characteristics for low gate drive on-resistance vs. drain current normalized on-resistance vs. junction temperature transfer characteristics on-resistance vs. gate-to-source voltage v gs gate-source voltage (v) v gs gate-source voltage (v) drain current (a) i d drain current (ma) i d drain current (a) i d on-resistance ( r ds(on) v ds drain-to-source voltage (v) v ds drain-to-source voltage (v) i d drain current (a) v gs = 10 v t j = 25 c t j = 25 c t j junction temperature ( c) r ds(on) drain-source on-resistance (normalized) v gs = 4.0 v 2.0 012345 1.6 1.2 0.8 0.4 0 9 v 8 v 7 v 6 v 5 v 4 v 0.5 0.4 0.3 0 0 2 10 0.2 0.1 4 6 8 125 c t j = 55 c 10 8 6 0 0 0.5 3.0 4 2 1.0 1.5 2.0 2.5 7 0 4 8 12 16 20 6 5 4 0 3 2 1 i d = 0.1 a 0.5 a 1.0 a t j = 25 c 2.00 1.75 0.50 50 10 150 1.50 1.25 30 70 110 1.00 0.75 v gs = 10 v i d = 0.5 a v ds = 10 v v gs = 10 v 25 c r ds(on) drain-source on-resistance (
vp0808b/l/m, vp1008b/l/m 4 siliconix p-37655erev. b, 25-jul-94 typical characteristics (25 c unless otherwise noted) 15.0 12.5 10.0 0 0 100 500 7.5 5.0 200 300 400 2.5 80 v 10 k duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse 1 0.01 0.1 0.01 0.1 1 100 10 1 k 10 50 100 100 10 1 20 200 160 120 0 0 10 50 80 40 20 30 40 10 1 0.01 1.0 1.5 4.5 0.1 2.0 2.5 3.0 3.5 4.0 threshold region capacitance normalized effective transient thermal impedance, junction-to-ambient (to-226aa) gate charge drive resistance effects on switching normalized effective transient thermal impedance t 1 square wave pulse duration (sec) v ds drain-to-source voltage (v) v gs gate-to-source voltage (v) 55 c q g total gate charge (pc) 125 c drain current (ma) i d c capacitance (pf) gate-to-source voltage (v) v gs t switching time (ns) c rss c oss c iss v gs = 0 v f = 1 mhz i d = 0.5 a v ds = 50 v v dd = 25 v r l = 50 v gs = 0 to 10 v i d = 500 ma t d(on) t d(off) t r t f t j = 150 c 25 c 1. duty cycle, d = 2. per unit base = r thja = 156 c/w 3. t jm t a = p dm z thja (t) t 1 t 2 t 1 notes: p dm t 2 v ds = 5 v r g gate resistance ( )
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